Sample questions are the examples discussed in the lecture and the homework problems.Ĭhapter 7 Transistor Amplifiers (lecture note, in ppt format) Midterm Exam 2: TBA, Covering Chapter 5 (MOSFETs) It is due on March 26Ĭhapter 5 Homework solution (all problems) (complete the homeworks before reading the solution) We are going to build a cmos inverter from the bottom up, starting with the transistor-level schematic. Calculator is not allowed.Īppendix A: VLSI fabrication (for MOSFETs) A companion course with ECE 2020 - Electric Circuits I. You can bring a A4-size paper of equations. Circuits & Systems INE 5442 Lecture 12 The CMOS Inverter: static behavior. Midterm Exam #1: time: 1 hour 10 minutes, covering Chapter 3 and Chapter 4 Reference Notes: Fundamentals of Semiconductors The dates of the Midterm exam will be announced in class at least two weeks before the exam, and will depend on the course progress. Chapter 7 Transistor Amplifiers: 7.1, 7.2, 7.3 Chapter 6 Bipolar Junction Transistors: 6.7, 6.8, 6.9 Chapter 6 Bipolar Junction Transistors: 6.5, 6.6, 6.7 Chapter 6 Bipolar Junction Transistors: 6.3, 6.4 Second Midterm Exam and Chapter 6 Bipolar Junction Transistors: 6.1, 6.2 Chapter 5 MOS Field Effect Transistors: 5.7, 5.8, 5.9 Chapter 5 MOS Field Effect Transistors: 5.5, 5.6, 5.7 Chapter 5 MOS Field Effect Transistors: 5.3, 5.4 First Midterm Exam and Chapter 5 MOS Field Effect Transistors: 5.1, 5.2 In-class performance extra credits: 5 pts Prerequisite : Grade of C or better in ECE 280 or in ECE 285 Required Textbook : Microelectronics Circuits, by Sedra and Smith, 7th Edition, Pub. The lecture will cover knowledge on integrated circuits, feedback concepts and operational amplifiers. CMOS VLSI Design A Circuits and Systems Perspective, Neil H. Topics include properties of semiconductor, diodes, bipolar junction transistors, MOS field-effect transistors and transistor amplifiers. Essentials of VLSI circuits and systems Chalk & Talk. This course is to provide the principles of operation and applications of electron devices and linear circuits. Graduate Teaching Assistant: Hanke Cheng ( ) - Lab ECE334 Graduate Teaching Assistant: Parameswari Raju ) – grading&help Instructor: Qiliang Li, Engineering Bldg, Room 3250, Tel 70, Email: Hours: Tuesday 9:30 am - 11:30 am other times by appointment. Time and location: Tuesday and Thursday 12:00 PM - 1:15 PM, Lecture Hall 1 Spring 2020 ECE 333: Linear Electronics I Implement a circuit or subsystem at the transistor level to solve an open-ended problem and effectively communicate the constraints and critical aspects of that system.Qiliang Li, Professor - George Mason UniversityĮLECTRICAL AND COMPUTER ENGINEERING DEPARTMENT CMOS INVERTER In Fig.2.9, the mask layout design of a CMOS inverter will be examined step-by-step.Develop an ability to parse large circuits and systems into smaller, analyzable subunits, analyze them, and then apply the understanding gained from that process to analyze the system as a whole, including for noise and variation.Be able to calculate transfer functions and Bode plots and use them to estimate the stability of an electronic system.MOSFET Device-1950+ to 2020 New elements in nano technologies are emerging. Develop an intuition for analog circuit behavior in both linear and nonlinear operation. Salem Lecture Notes .2 Electronics Revolution.Develop an understanding of device and circuit theory sufficient to estimate the low and high frequency behavior of linear circuits, including noise.Prerequisites/Corequisites Prerequisite: ECE 3150.Ĭomments Culminating design experience (CDE) course. Throughout the course, emphasis is placed on design-oriented analysis techniques. Layout techniques for analog integrated circuits. Transistor-level design of linear analog integrated circuits, such as operational amplifiers and operational transconductance amplifiers. Basic building blocks for linear analog integrated circuits: single-stage amplifiers, current mirrors, and differential pairs. Overview of devices available to analog integrated-circuit designers in modern CMOS and BiCMOS processes: resistors, capacitors, MOS transistors, and bipolar transistors. Mason Lecture Notes 7.16 CMOS Power Consumption P P DC + P dyn P DC: DC (static) term P dyn: dynamic (signal changing) term P DC P I DD V DD I DD DC current from power supply ideally, I DD 0 in CMOS: ideally only current during switching action leakage currents cause I DD > 0, define. Course information provided by the Courses of Study 2020-2021.
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